Editing Differences between Dynamic random-access memory and Static random-access memory (section)

=== Comparison Table ===
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! Category !! Dynamic random-access memory (DRAM) !! Static random-access memory (SRAM)
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| '''Data Retention Mechanism''' || Stores data as a charge in a capacitor; requires periodic refreshing to prevent data loss due to leakage. || Uses a flip-flop circuit (made of multiple transistors) to hold data as long as power is supplied; no refresh is needed.<ref name="ref4" /><ref name="ref3" />
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| '''Speed''' || Slower, with access times typically in the range of 10-100 nanoseconds. || Faster, with access times as low as 0.5-2.5 nanoseconds, making it suitable for speed-sensitive applications.
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| '''Cost per Bit''' || Less expensive due to its simpler cell structure. || Significantly more expensive because of its complex cell structure with more transistors.
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| '''Density''' || High density, allowing for larger memory capacities in a smaller physical area. || Low density, as the six-transistor cell takes up more space than a one-transistor, one-capacitor cell.<ref name="ref5" />
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| '''Power Consumption''' || Generally higher standby power consumption due to the constant need for refresh cycles. || Lower power consumption when idle, but can consume more power during active use.<ref name="ref1" />
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| '''Typical Applications''' || Main system memory in PCs, laptops, smartphones, and servers; graphics cards. || CPU cache (L1, L2, L3), processor registers, and in networking devices like routers and switches.<ref name="ref4" /><ref name="ref3" />
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